Van der Waals contact between 2D magnetic VSe2 and transition metals and demonstration of high-performance spin-field-effect transistors

This study used density functional theory and the quantum transport method to investigate interfacial coupling spin of transition metals (TMs) with a Fe, Co, Ni/2H-VSe2 hybrid nanostructure. Because indirect TM-Se-V led an obvious reduction magnetic moment disappearance half-metal characteristics 2H-VSe2, expected spin-filtering effect individual TMs 2H-VSe2 deteriorated at contact region. Nevertheless, all TM/2H-VSe2-based dual-probe devices exhibited interesting bias-dependent spin-injection efficiency maximum output spin-polarized current 666 mA mm−1 in Co/2H-VSe2. The proposed spin-field-effect transistor demonstrated outstanding performance. Ni/2H-VSe2-based achieved 3117 good switching characteristic 106 mV dec−1. Importantly, transistors widely tunable scale extraction ranging consistently between 96% −92% gate bias. These results indicate promising candidate for use high-performance spintronic devices.